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Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes.

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Affiliations

  • 1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.
      Authors
    • Covre Da Silva SF 1, 2
    • Garcia AJ Jr 1
    • Aigner M 1
    • Weidinger C 1
    • Krieger TM 1
    • Undeutsch G 1
    • Manna S 1, 3
    • Peter M 1
    • Brytavskyi I 1
    • Aberl J 1
    • Rastelli A 1
    (11 authors)
  • 2. Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas (UNICAMP), 13083-859 Campinas, Brazil.
      Authors
    • Covre Da Silva SF 1, 2
    • Deneke C 2
    (2 authors)
  • 3. Department of Electrical Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, Delhi 110016, India.
      Authors
    • Bashir I 3
    • Manna S 1, 3
    (2 authors)

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Nano Letters, 15 Jan 2026,
https://doi.org/10.1021/acs.nanolett.5c04426 PMID: 41537462 

Abstract 

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has allowed the growth of almost strain-free QDs, with low and controllable surface densities, small excitonic fine structure splitting (FSS), and fast radiative decays. Here, we extend the technique to In(Ga)As QDs in AlGaAs, thereby increasing the achievable emission wavelength range beyond that accessible to GaAs/AlGaAs QDs while preserving some of the key advantages of this growth method. We observe QD densities of ∼0.25 μm-2, FSS values as small as 3 μeV, and short radiative lifetimes of ∼300 ps, while extending the achievable emission wavelength to ∼900 nm at cryogenic temperatures. We envision these QDs to be particularly suitable for integrated quantum photonics applications.

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Read article at publisher's site: https://doi.org/10.1021/acs.nanolett.5c04426

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    Funding 

    Funders who supported this work.

    ??sterreichische Forschungsf??rderungsgesellschaft (2)

    • Grant ID: 906046

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    • Grant ID: 891366

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    Austrian Science Fund FWF (1)

    • Grant ID: 10.55776/COE1

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    Conselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico (1)

    • Grant ID: 300636/2025-3

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    Department of Science and Technology, Ministry of Science and Technology, India

      European Commission (3)

      • Grant ID: 871130

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      • Grant ID: 101017733

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      • Grant ID: 101115575

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      Funda????o de Amparo ?? Pesquisa do Estado de S??o Paulo (3)

      • Grant ID: 2023/01517-9

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      • Grant ID: 2024/08527-2

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      • Grant ID: 2024/21615-8

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      Indian Institute of Science

        Ministry of Education, India (1)

        • Grant ID: STARS-2/2023-0571

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        State of Upper Austria

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